A novel porous silicon sensor for detection of sub-ppm NO

C. Baratto, G. Faglia, E. Comini, G. Sberveglieri, A. Taroni, V. La Ferrara, L. Quercia, G. Di Francia

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We developed a new technique for the deposition of free-standing porous silicon (PS) on alumina substrate with interdigital contacts (Italian Patent ENEA-INFM), thus removing the silicon substrate, that is inactive in gas detection and is much more conductive than PS. The dc and ac electrical measurements in a controlled atmosphere were performed to test the sensor response towards NO2(0.1-10ppm), O3(200 ppb), CO (1000 ppm), benzene (20 ppm), organic vapours and humidity. The device was able to detect very low concentrations of nitrogen dioxide (100 ppb) with no interference from ozone, benzene, CO and organic vapours. Indeed humidity interferes with nitrogen dioxide detection and must be kept under control. Since PS showed great response to NO2at room temperature (RT), no heating of the sensor is required. © 2001 Elsevier Science B.V.
Original languageEnglish
Pages (from-to)62 - 66
Number of pages5
JournalSensors and Actuators, B: Chemical
Issue number1-2
Publication statusPublished - 15 Jun 2001


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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