The development of hybrid heterojunction solar cell fabricated by growing ultrathin amorphous silicon by Plasma Enhanced Chemical Vapour Deposition using temperatures below 250 °C, here reported as a-Si/c-Si HJ, offers the potential to obtain solar cells on thin crystalline silicon wafers. We performed studies on limiting process steps of this solar cells technology. Several wet and dry cleaning procedures of the c-Si surface were investigated to leave an atomically flat and uncontaminated surface, both for mono- and poly-silicon. The choice of the buffer layer as a tool to reduce any c-Si surface damages during PECVD is reported. The way to optimize the front contact by decreasing the contact resistivity between metal and semiconductor as well as the application of an ITO layer with screen printed metal grid to perform large area application were proposed. Conversion efficiencies of 16% on 1.26 cm2on p-type Czochralski silicon wafer, 10.2% on 64 cm2on p-type cast silicon wafer, 11.2% on 0.75 cm2on p-type poly-silicon wafer were obtained.
|Pages (from-to)||565 - 570|
|Number of pages||6|
|Journal||Diffusion and Defect Data Pt.B: Solid State Phenomena|
|Publication status||Published - 1999|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
De Rosa, R., Grilli, M. L., Sasikala, G., Tucci, M., & Roca, F. (1999). a-Si/c-Si heterojunctions as a tool to realize solar cells based on thin poly-silicon growth on glass. Diffusion and Defect Data Pt.B: Solid State Phenomena, 67, 565 - 570.