NiOxthin films were grown on n-Si substrates by radio frequency sputtering technique for the fabrication of a heterojunction p-n diode. X-ray diffraction, scanning electron microscope and atomic force microscope results revealed that NiOxfilms had nano sized polycrystalline nature. The X-ray energy dispersive analysis was used to determine elemental composition of the NiOxfilms. High quality vacuum evaporated silver (Ag) (ohmic) layer and nickel (Ni) (measurement electrode) dots were used to make contacts to the p-NiOx/n-Si heterojunction, in such a way that 8 Ni/p-NiOx/n-Si/Ag devices were fabricated. Current-voltage (I–V) and capacitance-voltage (C–V) measurements of the p-NiOx/n-Si heterojunctions showed good diode characteristics and the average barrier height has been calculated as 0.652 eV.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
Grilli, M. L., Aydogan, S., & Yilmaz, M. (2016). A study on non-stoichiometric p-NiOx/n-Si heterojunction diode fabricated by RF sputtering: Determination of diode parameters. Superlattices and Microstructures, 100, 924 - 933. https://doi.org/10.1016/j.spmi.2016.10.059