A study on the gate voltage dependence of the activation energy in Meyer-Neldel rule for charge mobility in pentacene OTFTs

Mario Petrosino, Riccardo Miscioscia, Anna De Girolamo Del Mauro, Romina Rega, Valerio Cerri, Carla Minarini, Alfredo Rubino

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Abstract

A temperature analysis of the OTFT having pentacene as channel semiconductor and PMMA as gate dielectric has been performed. The experimental results have been studied by extracting the field-effect mobility of the TFTs and relating it to the sample's temperature. We have found the mobility to follow the Meyer-Neldel rule. This behavior can be considered imputable to the channel carrier hopping. The gate voltage effect on the thermal activation energy for the mobility and the asymptotic parameter has been also taken into account. © 2010 American Institute of Physics.
Original languageEnglish
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event5th International Conference on Times of Polymers (TOP) and Composites - , Italy
Duration: 1 Jan 2010 → …

Conference

Conference5th International Conference on Times of Polymers (TOP) and Composites
CountryItaly
Period1/1/10 → …

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Petrosino, M., Miscioscia, R., De Girolamo Del Mauro, A., Rega, R., Cerri, V., Minarini, C., & Rubino, A. (2010). A study on the gate voltage dependence of the activation energy in Meyer-Neldel rule for charge mobility in pentacene OTFTs. Paper presented at 5th International Conference on Times of Polymers (TOP) and Composites, Italy. https://doi.org/10.1063/1.3455638