Amorphous SixC1-xthin films have been grown by low-pressure chemical vapour deposition at 800 K from Si2H6and C2H2in the x concentration range 0.5≤x<0.7. Measurements of the valence-band and core-level photoemission spectra using X-ray photoemission spectroscopy and synchrotron radiation have shown a clear change in the electronic structure for 0.55<x<0.60, where the films appear to lose their predominant SiC character and acquire an increasing Si-like signature in the spectra. X-ray diffraction data on polycrystalline SixC1-xfilms obtained by excimer laser annealing during growth have shown the formation of a dominant 3C-SiC phase up to x=0.6, while for higher x the growth of a poly-Si phase has been observed. © Springer-Verlag 2004.
|Pages (from-to)||991 - 996|
|Number of pages||6|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - Oct 2005|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
Santoni, A., Lancok, J., Dhanak, V. R., Loreti, S., Miller, G., & Minarini, C. (2005). A valence-band and core-level photoemission study of a-Si. Applied Physics A: Materials Science and Processing, 81(5), 991 - 996. https://doi.org/10.1007/s00339-004-2976-4