Accurate analysis of the piezopotential and the stored energies in laterally bent piezo-semiconductive NWs

Rodolfo Araneo, Giampiero Lovat, Christian Falconi, Andrea Notargiacomo, Antonio Rinaldi

Research output: Contribution to conferencePaper

8 Citations (Scopus)

Abstract

Here we study the piezopotential, the carrier concentration, and the stored energies in laterally bent piezo-semiconductive NWs with total-bottom contact. Moreover, we give reasons for the well-known existence of two regions where the piezopotential has an opposite sign in comparison with the rest of the NW. Finally, we provide an upper limit to the static mechanical-to-electrical conversion efficiency by computing the ratio between the total stored electrostatic energy and the total (mechanical and electrostatic) stored energy. Our results can provide guidelines for designing devices based on laterally bent piezoelectric NWs. © 2013 Materials Research Society.
Original languageEnglish
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 MRS Spring Meeting - , United States
Duration: 1 Jan 2013 → …

Conference

Conference2013 MRS Spring Meeting
CountryUnited States
Period1/1/13 → …

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Araneo, R., Lovat, G., Falconi, C., Notargiacomo, A., & Rinaldi, A. (2013). Accurate analysis of the piezopotential and the stored energies in laterally bent piezo-semiconductive NWs. Paper presented at 2013 MRS Spring Meeting, United States. https://doi.org/10.1557/opl.2013.835