An active two dimensional near field imaging of a High Electron Mobility Transistor (HEMT) used as THz detector has been performed. The reflective imaging system developed at the ENEA FEL Facility in Frascati has been used to this purpose. This imaging technique has shown to be particularly powerful in resolving various coupling mechanisms of the incident radiation with the device. © 2008 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
Coppa, A., Foglietti, V., Giovine, E., Doria, A., Gallerano, G. P., Giovenale, E., ... Evangelisti, F. (2008). Active electric near field imaging of electronic devices. Infrared Physics and Technology, 51(5), 470 - 472. https://doi.org/10.1016/j.infrared.2007.12.035