Active electric near field imaging of electronic devices

A. Coppa, V. Foglietti, E. Giovine, A. Doria, G.P. Gallerano, E. Giovenale, A. Cetronio, C. Lanzieri, M. Peroni, F. Evangelisti

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Abstract

An active two dimensional near field imaging of a High Electron Mobility Transistor (HEMT) used as THz detector has been performed. The reflective imaging system developed at the ENEA FEL Facility in Frascati has been used to this purpose. This imaging technique has shown to be particularly powerful in resolving various coupling mechanisms of the incident radiation with the device. © 2008 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)470 - 472
Number of pages3
JournalInfrared Physics and Technology
Volume51
Issue number5
DOIs
Publication statusPublished - May 2008
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Coppa, A., Foglietti, V., Giovine, E., Doria, A., Gallerano, G. P., Giovenale, E., ... Evangelisti, F. (2008). Active electric near field imaging of electronic devices. Infrared Physics and Technology, 51(5), 470 - 472. https://doi.org/10.1016/j.infrared.2007.12.035