AlGaN/GaN heterostructure transistors for the generation and detection of THz radiation

E. Giovine, A. Di Gaspare, M. Ortolani, F. Evangelisti, V. Foglietti, A. Cetronio, D. Dominijanni, C. Lanzieri, M. Peroni, A. Doria, E. Giovenale, I. Spassovsky, G.P. Gallerano

Research output: Contribution to conferencePaper

Abstract

The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies. © 2010 IEEE.
Original languageEnglish
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 - , Italy
Duration: 1 Jan 2010 → …

Conference

Conference35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
CountryItaly
Period1/1/10 → …

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Giovine, E., Di Gaspare, A., Ortolani, M., Evangelisti, F., Foglietti, V., Cetronio, A., ... Gallerano, G. P. (2010). AlGaN/GaN heterostructure transistors for the generation and detection of THz radiation. Paper presented at 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010, Italy. https://doi.org/10.1109/ICIMW.2010.5612705