Amorphous-porous silicon heterojunction for gas sensor application

R. De Rosa, G. Di Francia, V. La Ferrara, L. Quercia, F. Roca, M. Tucci

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Abstract

In this work we studied the compatibility of amorphous thin film technology with the porous silicon in case of large area applications like gas sensors. We found that thin amorphous silicon layer growth on porous silicon substrates preserves the room temperature photoluminescence of porous material. Also amorphous-porous silicon heterojunction shows a good rectifying behaviour. Those properties, correlated with the porous silicon sensitivity to the gas environments, can be effectively used to realise heterojunction diodes whose current voltage characteristics are modified by the gas reactivity on the porous surface. Sensitivity of those devices and response time to different gas exposure have been investigated.
Original languageEnglish
Pages (from-to)489 - 493
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume182
Issue number1
DOIs
Publication statusPublished - Nov 2000

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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