Amorphous silicon-based guided-wave passive and active devices for silicon integrated optoelectronics

Giuseppe Cocorullo, Francesco G. Della Corte, R. De Rosa, Ivo Rendina, A. Rubino, E. Terzini

Research output: Contribution to journalArticle

82 Citations (Scopus)


Waveguides and interferometric light amplitude modulators for application at the 1.3- and 1.55-μm fiber communication wavelengths have been fabricated with thin-film hydrogenated amorphous silicon and its related alloys. The technique adopted for the thin-film growth is the plasma-enhanced chemical vapor deposition, which has been shown to give the lowest defect concentration in the film. Consequently the proposed waveguiding structures take advantage of the low optical absorption shown by a-Si:H at photon energies below the energy gap. In addition a good radiation confinement can be obtained thanks to the bandgap tailoring opportunity offered by this simple and inexpensive technology. In particular rib waveguides, based on a a-SiC:H/a-Si:H stack, have been realized on crystal silicon, showing propagation losses as low as 0.7 dB/cm. The same structure has been utilized for the fabrication of thermooptic Fabry-Perot modulators with switching times of 10 μs. Modulators based on the alternative waveguiding configuration ZnO/a-Si:H, giving comparable results, are also presented.
Original languageEnglish
Pages (from-to)997 - 1001
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number6
Publication statusPublished - Nov 1998
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this