Amorphous silicon crystallisation by a long-pulse excimer laser

P. Di Lazzaro, S. Bollanti, F. Bonfigli, F. Flora, G. Giordano, T. Letardi, D. Murra, C.E. Zheng, A. Baldesi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

In this paper we summarise the results of the annealing of a-Si films done at ENEA Frascati by the XeCl laser facility Hercules and the preliminary results of the characterisation work done on the first Italian industrial high-energy excimer laser, named Hercules L. Some information will be also given on a novel process to obtain homogeneous, large grain poly-Si and on a new homogeniser with zoom.
Original languageEnglish
DOIs
Publication statusPublished - 2001
Externally publishedYes
EventXIII International Symposium on Gas Flow and Chemical Lasers - , Italy
Duration: 1 Jan 2001 → …

Conference

ConferenceXIII International Symposium on Gas Flow and Chemical Lasers
CountryItaly
Period1/1/01 → …

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Di Lazzaro, P., Bollanti, S., Bonfigli, F., Flora, F., Giordano, G., Letardi, T., ... Baldesi, A. (2001). Amorphous silicon crystallisation by a long-pulse excimer laser. Paper presented at XIII International Symposium on Gas Flow and Chemical Lasers, Italy. https://doi.org/10.1117/12.413991