AMPS-1D modeling of a-Si:H n

A. Eray, G. Nobile

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, the AMPS-1D (Analysis of Microelectronic and photonic structure) simulation program is used to understand the origin of the differences observed in Space Charge Limited Current (SCLC) analysis in thin and thick a-Si:H n+-i-n+ structure. For that purpose, the problem of applicability of SCLC measurements to n+-i-n+ a-Si:H samples are investigated by using both the thin (0.3 μm) and thick (3 μm) samples. The simulation results show that activation energy in thick samples is larger than in thinner samples, which are an agreement with the experimental results. It is emphasized that this method is highly useful for good quality a-Si:H samples, even if it is a thin sample, and den Boer analysis gives correct information about the density of states. This information comes from the states in the upper limited part of the gap, as exhibited by the lower activation energy of thin samples.
Original languageEnglish
Pages (from-to)31 - 39
Number of pages9
JournalTurkish Journal of Physics
Volume28
Issue number1
Publication statusPublished - 2004
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Eray, A., & Nobile, G. (2004). AMPS-1D modeling of a-Si:H n. Turkish Journal of Physics, 28(1), 31 - 39.