Analysis of the structural parameters of an a-Si:H n+-i-n + structure by numerical simulations

A. Eray, G. Nobile

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2 Citations (Scopus)


In this study, we discuss measurements of the J-V characteristics of an a-Si:H n+-i-n+structure, and the results of numerical simulation using the AMPS-1 D simulation program. Application of the AMPS simulation model to the sample structures considered allows us to determine the structural properties of the a-Si:H n+-i-n+structure. The one-dimensional simulation program was examined in n+-i-n+structures with different qualities and thicknesses of the i-layer. We find that the n+/i interface is more abrupt for a device with a high density of states (DOS), resulting in high values of the activation energy (Eact). In contrast, thin samples of good quality (low DOS) give low values of Eact. Analysis by numerical modeling confirms the experimental results. © 2003 Kluwer Academic Publishers.
Original languageEnglish
Pages (from-to)735 - 736
Number of pages2
JournalJournal of Materials Science: Materials in Electronics
Issue number10-12
Publication statusPublished - Oct 2003
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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