Analysis of the structural properties of polycrystalline silicon germanium films

S. Sedky, P. Fiorini, S. Loreti, M. Caymax, K. Baert, C. Vanhoof

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

In this work, poly SiGe is proposed as a suitable material for surface micromachining applications that require a low thermal budget. The effect of the deposition conditions and layer thickness on the structural and mechanical properties of poly SiGe is analyzed by means of transmission electron microscopy (TEM) and X-ray diffraction spectroscopy (XRD). It is demonstrated that using as-grown poly SiGe (deposited at 625°C), a low tensile stress (+60 MPa) and a negligible stress gradient can be achieved.
Original languageEnglish
DOIs
Publication statusPublished - 1999
Externally publishedYes
Event11th International Conference on Microelectronics, ICM 1999 - Kuwait City, Kuwait
Duration: 1 Jan 1999 → …

Conference

Conference11th International Conference on Microelectronics, ICM 1999
CountryKuwait
CityKuwait City
Period1/1/99 → …

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Sedky, S., Fiorini, P., Loreti, S., Caymax, M., Baert, K., & Vanhoof, C. (1999). Analysis of the structural properties of polycrystalline silicon germanium films. Paper presented at 11th International Conference on Microelectronics, ICM 1999, Kuwait City, Kuwait. https://doi.org/10.1109/ICM.2000.884807