We report on the effect of the annealing temperature (range 6001100 °C) on amorphous silicon-rich nitride films deposited by PECVD at 300 °C. The evolution of Raman spectra, room temperature photoluminescence, and optical absorption has been investigated on samples with different stoichiometry. Evidence of partial phase separation, with silicon-rich and nitrogen-rich regions, in the as-grown material has been inferred, with the thermal treatments inducing further reorganization of the two phases. Nucleation of silicon nanocrystals has been detected only after the highest temperature treatment on the sample with larger silicon content. © 2009 Published by Elsevier Ltd.
|Publication status||Published - Aug 2010|
|Event||Inorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting - , France|
Duration: 1 Aug 2010 → …
|Conference||Inorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting|
|Period||1/8/10 → …|
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