Annealing effects on PECVD-grown Si rich aSiN

Emilia M. Esposito, Lucia V. Mercaldo, Paola Delli Veneri, Laura Lancellotti, Carlo Privato

Research output: Contribution to conferencePaper

10 Citations (Scopus)

Abstract

We report on the effect of the annealing temperature (range 6001100 °C) on amorphous silicon-rich nitride films deposited by PECVD at 300 °C. The evolution of Raman spectra, room temperature photoluminescence, and optical absorption has been investigated on samples with different stoichiometry. Evidence of partial phase separation, with silicon-rich and nitrogen-rich regions, in the as-grown material has been inferred, with the thermal treatments inducing further reorganization of the two phases. Nucleation of silicon nanocrystals has been detected only after the highest temperature treatment on the sample with larger silicon content. © 2009 Published by Elsevier Ltd.
Original languageEnglish
DOIs
Publication statusPublished - Aug 2010
EventInorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting - , France
Duration: 1 Aug 2010 → …

Conference

ConferenceInorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting
CountryFrance
Period1/8/10 → …

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All Science Journal Classification (ASJC) codes

  • Energy(all)

Cite this

Esposito, E. M., Mercaldo, L. V., Veneri, P. D., Lancellotti, L., & Privato, C. (2010). Annealing effects on PECVD-grown Si rich aSiN. Paper presented at Inorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting, France. https://doi.org/10.1016/j.egypro.2010.07.022