Application of the photo induced discharge technique for the investigation of a-Si:H thin-film transistor instability

G. Fortunato, R. Carluccio, L. Mariucci

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Abstract

Photo Induced Discharge technique has been used in order to probe the density of states at and below the Fermi level before and after positive gate bias-stress. From the results presented here, flat-band voltage variation rather than gap-state modifications seems to be the major effect induced by the bias-stress. © 1993.
Original languageEnglish
Pages (from-to)735 - 738
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 2
DOIs
Publication statusPublished - 2 Dec 1993
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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