Photo Induced Discharge technique has been used in order to probe the density of states at and below the Fermi level before and after positive gate bias-stress. From the results presented here, flat-band voltage variation rather than gap-state modifications seems to be the major effect induced by the bias-stress. © 1993.
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials
Fortunato, G., Carluccio, R., & Mariucci, L. (1993). Application of the photo induced discharge technique for the investigation of a-Si:H thin-film transistor instability. Journal of Non-Crystalline Solids, 164-166(PART 2), 735 - 738. https://doi.org/10.1016/0022-3093(93)91102-9