Back enhanced heterostructure with INterDigitated contact - Behind - solar cell

Mario Tucci, Luca Serenelli, Enrico Salza, Luisa Pirozzi, Giampiero De Cesare, Domenico Caputo, Matteo Ceccarelli, Pierino Martufi, Simona De Iuliis, Lambert J. Geerligs

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

In this paper we investigate in detail how the heterostructure concept can be implemented in an interdigitated back contact solar cell, in which both the emitters are formed on the back side of the c-Si wafer by amorphous/crystalline silicon heterostructure, and at the same time the grid-less front surface is passivated by a double layer of amorphous silicon and silicon nitride, which also provides an anti-reflection coating. The entire process, held at temperature below 300 °C, is photolithography-free, using a metallic self-aligned mask to create the interdigitated pattern. An open-circuit voltage of 695 mV has been measured on this device fabricated. The mask-assisted deposition process does not influence the uniformity of the deposited amorphous silicon layers. Several technological aspects that limit the fill factor are considered and discussed. © 2008 IEEE.
Original languageEnglish
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - , Australia
Duration: 1 Jan 2008 → …

Conference

Conference2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
CountryAustralia
Period1/1/08 → …

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Tucci, M., Serenelli, L., Salza, E., Pirozzi, L., De Cesare, G., Caputo, D., ... Geerligs, L. J. (2008). Back enhanced heterostructure with INterDigitated contact - Behind - solar cell. Paper presented at 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Australia. https://doi.org/10.1109/COMMAD.2008.4802136