Band offset of the In

M.R. Rajesh Menon, A. Mancini, C. Sudha Kartha, K.P. Vijayakumar, A. Santoni

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Abstract

In2S3thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical-chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In2S3/ITO interface has been determined by XPS resulting in a value of 1.9 ± 0.2 eV. Consequently, the conduction band offset has been estimated to be 1.0 ± 0.4 eV. © 2012 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)5856 - 5859
Number of pages4
JournalThin Solid Films
Volume520
Issue number18
DOIs
Publication statusPublished - 1 Jul 2012
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Menon, M. R. R., Mancini, A., Kartha, C. S., Vijayakumar, K. P., & Santoni, A. (2012). Band offset of the In. Thin Solid Films, 520(18), 5856 - 5859. https://doi.org/10.1016/j.tsf.2012.05.012