In2S3thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical-chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In2S3/ITO interface has been determined by XPS resulting in a value of 1.9 ± 0.2 eV. Consequently, the conduction band offset has been estimated to be 1.0 ± 0.4 eV. © 2012 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry