To increase the performances of amorphous silicon n-i-p solar cell, we investigate the possibility to enhance the built-in potential inserting thin high-conductivity chromium silicide layers at interfaces between metal electrodes and doped regions. We found that chromium silicide, formed on top of amorphous doped layer during chromium film evaporation, allows a reduction of activation energy of about 0.225 eV for n-and p-doped amorphous films. The activation energy reduction contributes to both built-in and open-circuit voltage enhancements, as demonstrated by comparing simulated and measured photovoltaic performances of n-i-p amorphous silicon solar cell with and without the chromium silicide layers. © 2010 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Caputo, D., De Cesare, G., & Tucci, M. (2010). Built-in enhancement in a-Si:H solar cell by chromium silicide layer. IEEE Electron Device Letters, 31(7), 689 - 691. . https://doi.org/10.1109/LED.2010.2047233