Built-in enhancement in a-Si:H solar cell by chromium silicide layer

Domenico Caputo, Giampiero De Cesare, Mario Tucci

Research output: Contribution to journalArticle

5 Citations (Scopus)


To increase the performances of amorphous silicon n-i-p solar cell, we investigate the possibility to enhance the built-in potential inserting thin high-conductivity chromium silicide layers at interfaces between metal electrodes and doped regions. We found that chromium silicide, formed on top of amorphous doped layer during chromium film evaporation, allows a reduction of activation energy of about 0.225 eV for n-and p-doped amorphous films. The activation energy reduction contributes to both built-in and open-circuit voltage enhancements, as demonstrated by comparing simulated and measured photovoltaic performances of n-i-p amorphous silicon solar cell with and without the chromium silicide layers. © 2010 IEEE.
Original languageEnglish
Article number5466089
Pages (from-to)689 - 691
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - Jul 2010
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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