Changes of hydrogen evolution thermodynamics induced by He and H

P. Delli Veneri, C. Privato, E. Terzini

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Intrinsic and n-type amorphous silicon films were deposited by plasma-enhanced chemical vapour deposition on Qz (fused silica), crystalline silicon and aluminium substrates. Different substrate temperatures (200°C and 300°C) and 50% diluted SiH4in He or H2process gas were used to change hydrogen content and microstructure of deposited amorphous material. The hydrogen evolution thermodynamics of a-Si:H films was investigated using differential scanning calorimetry to obtain the entropy change and the activation energy of hydrogen evolution process. Crystallization of a-Si:H was obtained by an isothermal annealing performed at a pressure of 30 mTorr, at 650°C, using different annealing times (30-480 s). Different entropy variations are observed in the a-Si:H films. The hydrogen evolution affects the crystallization kinetics; in fact, crystallization was delayed in the samples with a greater disorder after hydrogen evolution. © 2000 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)635 - 639
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume266-269 A
Publication statusPublished - 1 May 2000
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Delli Veneri, P., Privato, C., & Terzini, E. (2000). Changes of hydrogen evolution thermodynamics induced by He and H. Journal of Non-Crystalline Solids, 266-269 A, 635 - 639.