Characterization of excimer laser crystallized polysilicon by X-Ray Diffraction and by channeling contrast in a scanning electron microscope

S. Loreti, M. Vittori, L. Mariucci, G. Fortunato

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Structural characterization of polycrystalline silicon is usually performed by SEM technique on SECCO-etched samples. In this work we analyze, for the first time. Excimer Laser Annealed (ELA)-polysilicon by using channelling contrast effect produced when SEM is operating with low beam energy and high current density. This technique allows grain size study without chemical etching. In addition X-Ray Diffraction (XRD) analysis was performed to determined the crystallographic orientation and size of the crystallites.
Original languageEnglish
Pages (from-to)181 - 186
Number of pages6
JournalDiffusion and Defect Data Pt.B: Solid State Phenomena
Publication statusPublished - 1999
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

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