Structural characterization of polycrystalline silicon is usually performed by SEM technique on SECCO-etched samples. In this work we analyze, for the first time. Excimer Laser Annealed (ELA)-polysilicon by using channelling contrast effect produced when SEM is operating with low beam energy and high current density. This technique allows grain size study without chemical etching. In addition X-Ray Diffraction (XRD) analysis was performed to determined the crystallographic orientation and size of the crystallites.
|Pages (from-to)||181 - 186|
|Number of pages||6|
|Journal||Diffusion and Defect Data Pt.B: Solid State Phenomena|
|Publication status||Published - 1999|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy (miscellaneous)
- Condensed Matter Physics
Loreti, S., Vittori, M., Mariucci, L., & Fortunato, G. (1999). Characterization of excimer laser crystallized polysilicon by X-Ray Diffraction and by channeling contrast in a scanning electron microscope. Diffusion and Defect Data Pt.B: Solid State Phenomena, 67, 181 - 186.