Characterization of Si-CeO

A. Chiodoni, D. Andreone, D. Botta, C. Camerlingo, F. Fabbri, R. Gerbaldo, G. Ghigo, L. Gozzelino, F. Laviano, B. Minetti, C.F. Pirri, G. Tallarida, E. Tresso, E. Mezzetti

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Abstract

Material aspects of heterostructural Si/CeO2, fabricated by magnetron sputtering as buffered substrates for sputtered YBa2Cu3O7-x, (YBCO) films, are studied by means of X-ray diffraction, AFM, Raman and SIMS-ToF analysis. Different Si/CeO2layouts are chosen and tri-layers Si/CeO2/YBCO, grown on the respective bi-layer substrates, are preliminary analyzed. Outstanding material issues suggest that in the framework of sputtering technology, epitaxy is out of reach for Si/CeO2/YBCO multi-layers. However, the results point toward the scalability/integrability of the technology with silicon processing when the main target consists of networking for integrated electronics.
Original languageEnglish
Pages (from-to)2860 - 2863
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume13
Issue number2 III
DOIs
Publication statusPublished - Jun 2003
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chiodoni, A., Andreone, D., Botta, D., Camerlingo, C., Fabbri, F., Gerbaldo, R., ... Mezzetti, E. (2003). Characterization of Si-CeO. IEEE Transactions on Applied Superconductivity, 13(2 III), 2860 - 2863. https://doi.org/10.1109/TASC.2003.812042