Closed-form analytical expression for the conductive and dissipative parameters of the MOS-C equivalent circuit

S. Daliento, O. Tari, L. Lancellotti

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Abstract

The overall conductance of a metal-oxide-semiconductor structure, biased in the inversion regime, is described as the superposition of terms depending either on the minority carrier conductance GNor on the interface state dissipative contribution Rit. Derived analytical expressions are suitable for closed-form solutions allowing the extraction of the aforementioned parameters. © 2011 IEEE.
Original languageEnglish
Article number5997304
Pages (from-to)3643 - 3646
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume58
Issue number10
DOIs
Publication statusPublished - Oct 2011

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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