Combined high resolution X-ray diffraction and EXAFS studies of Si

P. De Padova, R. Felici, R. Larciprete, L. Ferrari, L. Ortega, V. Formoso, F. Comin, A. Balerna

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In this paper, we compare the structural information obtained by measuring X-ray diffraction reciprocal space maps and by EXAFS analysis on two Si(1-x)Gexalloys with low (LC) and high (HC) Ge concentration. From the analysis of the X-ray diffraction maps we determined the alloy lattice parameters for the cubic cell (a = 5.58 Å) of the fully relaxed HC sample and for the tetragonal cell (a = 5.43 Å, c = 5.46 Å) of the fully strained LC sample and from these values the Ge alloy content (HC: x = 0.66 ± 0.04, LC: x = 0.048 ± 0.003). The EXAFS data were taken at the Ge k-edge for incident wave polarization directions either parallel or perpendicular to the surface plane. The satisfactory correlation found between the Ge coordination ratio and the Ge-Si and Ge-Ge distances, derived by best-fitting the EXAFS curves, and the X-ray diffraction structural parameters indicates that the combination of the two techniques is a unique approach to achieve a thorough characterization of the structural and chemical properties of lattice mismatched heterostructures. © 1998 Published by Elsevier Science S.A.
Original languageEnglish
Pages (from-to)20 - 24
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 29 Apr 1998
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

De Padova, P., Felici, R., Larciprete, R., Ferrari, L., Ortega, L., Formoso, V., ... Balerna, A. (1998). Combined high resolution X-ray diffraction and EXAFS studies of Si. Thin Solid Films, 319(1-2), 20 - 24.