Comparative XPS and PYS studies of SnO

J. Szuber, G. Czempik, R. Larciprete, B. Adamowicz

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Abstract

The electronic properties of the space charge layer of the tin dioxide thin films, prepared by the laser-induced chemical vapour deposition (L-CVD), have been studied using X-ray photoelectron spectroscopy (XPS) and photoemission yield spectroscopy (PYS). Based on the analysis of Sn3d5/2XPS peak, the influence of exposition to molecular oxygen O2and hydrogen H2on the stoichiometry of the L-CVD deposited SnO2thin films, as well as the interface Fermi level position in the band gap, have been determined and compared to the variation of the work function determined from the threshold of the ex situ recorded photoemission yield spectra. The observed changes of the interface Fermi level and the work function upon adsorption/desorption of O2and H2were attributed to decrease/increase of the concentration of oxygen vacancies in the near surface region.
Original languageEnglish
Pages (from-to)177 - 181
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume70
Issue number1-3
DOIs
Publication statusPublished - 1 Nov 2000
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Szuber, J., Czempik, G., Larciprete, R., & Adamowicz, B. (2000). Comparative XPS and PYS studies of SnO. Sensors and Actuators, B: Chemical, 70(1-3), 177 - 181. https://doi.org/10.1016/S0925-4005(00)00564-5