High resolution transmission electron microscopy has been used to investigate the lattice damage distribution in Zn+implanted and implanted plus low-power pulsed-laser annealed (LPPLA) GaAs. The damage distribution of implanted samples has been examined in detail showing the presence of a continuous amorphous layer under the surface and stacking fault tetrahedra nuclei at the inner a-c interface. A solid phase epitaxial regrowth of ion implanted GaAs has been induced by LPPLA technique. In the annealed samples, the crystalline recovering is characterized by a low density of residual extended defects lying in the fully recrystallized amorphous layer. © 1996 American Institute of Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Vitali, G., Zollo, G., Pizzuto, C., Manno, D., Kalitzova, M., & Rossi, M. (1996). Cross-sectional high resolution electron microscopy of Zn. Applied Physics Letters, 69(26), 4072 - 4074. https://doi.org/10.1063/1.117822