Crystallisation of 500nm thick A-SiGe:H films through ArF-Excimer Laser radiation

S. Chiussi, F. Fabbri, L. Fornarini, P. González, B. León, S. Martelli, E. López, C. Serra, J. Serra

Research output: Contribution to conferencePaper

Abstract

Polycrystalline SiGe is attracting more and more attention in micro and optoelectronics devices both at industrial and university level. Research on both devices and material growth techniques continues at a very rapid pace in the scientific world. Low cost production techniques, capable to produce such alloys with uniform and controlled grain size, becomes of particular attention. Excimer laser crystallization has proved to be a valuable low thermal budget technique for amorphous silicon crystallization. Its main advantages are the high process quality and reproducibility joint to the possibility of tailoring the grain size both in small selected regions and in large areas. This technique is here applied for producing poly-SiGe alloys from amorphous SiGe films deposited on glass.
Original languageEnglish
DOIs
Publication statusPublished - 2003
Externally publishedYes
EventALT'02 International Conference on Advanced Laser Technologies - , Switzerland
Duration: 1 Jan 2003 → …

Conference

ConferenceALT'02 International Conference on Advanced Laser Technologies
CountrySwitzerland
Period1/1/03 → …

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Chiussi, S., Fabbri, F., Fornarini, L., González, P., León, B., Martelli, S., ... Serra, J. (2003). Crystallisation of 500nm thick A-SiGe:H films through ArF-Excimer Laser radiation. Paper presented at ALT'02 International Conference on Advanced Laser Technologies, Switzerland. https://doi.org/10.1117/12.537582