Single wavelength ellipsometry was used to monitor the CVD growth of Si(1-x)Gexalloys on Si and to evaluate the effect of sample irradiation by KrF laser pulses, performed during or after the CVD growth. The information obtained was correlated with AFM analysis results in order to optimize the growth parameters for an improved morphological quality of the alloy layers.
|Publication status||Published - 1998|
|Event||Proceedings of the 1997 MRS Fall Symposium - , Unknown|
Duration: 1 Jan 1998 → …
|Conference||Proceedings of the 1997 MRS Fall Symposium|
|Period||1/1/98 → …|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Larciprete, R., Padeletti, G., Cozzi, S., & Pieretti, S. (1998). CVD growth and excimer laser processing of SiGe alloys monitored by single wavelength ellipsometry and atomic force microscopy. Paper presented at Proceedings of the 1997 MRS Fall Symposium, Unknown.