CVD growth and excimer laser processing of SiGe alloys monitored by single wavelength ellipsometry and atomic force microscopy

R. Larciprete, G. Padeletti, S. Cozzi, S. Pieretti

Research output: Contribution to conferencePaper

Abstract

Single wavelength ellipsometry was used to monitor the CVD growth of Si(1-x)Gexalloys on Si and to evaluate the effect of sample irradiation by KrF laser pulses, performed during or after the CVD growth. The information obtained was correlated with AFM analysis results in order to optimize the growth parameters for an improved morphological quality of the alloy layers.
Original languageEnglish
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - , Unknown
Duration: 1 Jan 1998 → …

Conference

ConferenceProceedings of the 1997 MRS Fall Symposium
CountryUnknown
Period1/1/98 → …

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Larciprete, R., Padeletti, G., Cozzi, S., & Pieretti, S. (1998). CVD growth and excimer laser processing of SiGe alloys monitored by single wavelength ellipsometry and atomic force microscopy. Paper presented at Proceedings of the 1997 MRS Fall Symposium, Unknown.