Damage and ablation of large bandgap dielectrics induced by a 46.9 nm laser beam

A. Ritucci, G. Tomassetti, A. Reale, L. Arrizza, P. Zuppella, L. Reale, L. Palladino, F. Flora, F. Bonfigli, A. Faenov, T. Pikuz, J. Kaiser, J. Nilsen, A.F. Jankowski

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We applied a 0.3 mJ, 1.7 ns, 46.9 nm soft-x-ray argon laser to ablate the surface of large bandgap dielectrics: CaF2and LiF crystals. We studied the ablation versus the fluence of the soft-x-ray beam, varying the fluence in the range 0.05-3 J/cm2. Ablation thresholds of 0.06 and 0.1 J/cm2and ablation depths of 14 and 20 nm were found for CaF2and LiF, respectively. These results define new ablation conditions for these large bandgap dielectrics that can be of interest for the fine processing of these materials. © 2006 Optical Society of America.
Original languageEnglish
Pages (from-to)68 - 70
Number of pages3
JournalOptics Letters
Volume31
Issue number1
DOIs
Publication statusPublished - 1 Jan 2006
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Ritucci, A., Tomassetti, G., Reale, A., Arrizza, L., Zuppella, P., Reale, L., ... Jankowski, A. F. (2006). Damage and ablation of large bandgap dielectrics induced by a 46.9 nm laser beam. Optics Letters, 31(1), 68 - 70. https://doi.org/10.1364/OL.31.000068