We have studied the light degradation process of a-Si:H at different temperatures monitoring the defect density and the photoconductivity. Our data are not in complete agreement with the predictions of the two most widely accepted models (the recombination induced bond breaking model and the stretched exponential one). We show that our experiments can be well interpreted by a model in which the creation rate is proportional to the square of the photoconductivity and in which the annealing rate is computed considering a distribution of energy barriers and it is enhanced by the degradation light.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
Mariucci, L., Sinno, G., Minarini, C., & Mittiga, A. (1996). Density of states and photoconductivity light degradation in a-Si:H at different temperatures. Journal of Non-Crystalline Solids, 198-200(PART 1), 482 - 485. https://doi.org/10.1016/0022-3093(95)00746-6