Deposition of microcrystalline silicon-carbon films by PECVD

G. Ambrosone, U. Coscia, S. Lettieri, P. Maddalena, C. Minarini, S. Ferrero, A. Patelli, V. Rigato

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Abstract

Hydrogenated microcrystalline silicon-carbon (μc-Si1-xCx:H) films have been grown in a plasma enhanced chemical vapour deposition system from silane-methane gas mixtures highly diluted in hydrogen. The effects of RF power, hydrogen dilution and substrate temperature on μc-Si1-xCx:H properties have been investigated. The increase in RF power reduces the average crystallite size of Si, enhances the carbon fraction, C/(C+Si), and causes a decrease in dark conductivity. The hydrogen dilution ratio R, [H2]/([SiH4]+[CH4]), strongly affects the structure of the films. For R<100 the hydrogenated silicon-carbon films are amorphous, while for R≥100 the alloys are microcrystalline. Under suitable deposition conditions μc-Si1-xCx:H films can be grown in the substrate temperature range of 200-400 °C. © 2003 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)274 - 279
Number of pages6
JournalThin Solid Films
Volume451-452
DOIs
Publication statusPublished - 22 Mar 2004
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ambrosone, G., Coscia, U., Lettieri, S., Maddalena, P., Minarini, C., Ferrero, S., ... Rigato, V. (2004). Deposition of microcrystalline silicon-carbon films by PECVD. Thin Solid Films, 451-452, 274 - 279. https://doi.org/10.1016/j.tsf.2003.11.023