Hydrogenated microcrystalline silicon-carbon (μc-Si1-xCx:H) films have been grown in a plasma enhanced chemical vapour deposition system from silane-methane gas mixtures highly diluted in hydrogen. The effects of RF power, hydrogen dilution and substrate temperature on μc-Si1-xCx:H properties have been investigated. The increase in RF power reduces the average crystallite size of Si, enhances the carbon fraction, C/(C+Si), and causes a decrease in dark conductivity. The hydrogen dilution ratio R, [H2]/([SiH4]+[CH4]), strongly affects the structure of the films. For R<100 the hydrogenated silicon-carbon films are amorphous, while for R≥100 the alloys are microcrystalline. Under suitable deposition conditions μc-Si1-xCx:H films can be grown in the substrate temperature range of 200-400 °C. © 2003 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Ambrosone, G., Coscia, U., Lettieri, S., Maddalena, P., Minarini, C., Ferrero, S., ... Rigato, V. (2004). Deposition of microcrystalline silicon-carbon films by PECVD. Thin Solid Films, 451-452, 274 - 279. https://doi.org/10.1016/j.tsf.2003.11.023