Detection of terahertz radiation by AlGaN/GaN field-effect transistors

M. Ortolani, A. Di Gaspare, E. Giovine, F. Evangelisti, V. Foglietti, A. Doria, G.P. Gallerano, E. Giovenale, G. Messina, I. Spassovsky, A. Coppa, C. Lanzieri, M. Peroni, A. Cetronio, M. Sakowicz, W. Knap

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. One open issue is how the radiation couples to the sub-wavelength transistor channel. Here, we studied the coupling of radiation to an AlGaN/GaN transistor with cut-off frequency of 30 GHz. Local irradiation with a Free Electron Laser source at 0.15 THz allowed us to selectively couple the signal to the channel through one transistor terminal at a time. Far-field experiments at 0.15 - 0.94 THz were also performed in order to study the nonlinear properties of the transistor channel. © 2009 IEEE.
Original languageEnglish
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009 - , Korea, Republic of
Duration: 1 Jan 2009 → …

Conference

Conference34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
CountryKorea, Republic of
Period1/1/09 → …

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Communication

Cite this

Ortolani, M., Gaspare, A. D., Giovine, E., Evangelisti, F., Foglietti, V., Doria, A., ... Knap, W. (2009). Detection of terahertz radiation by AlGaN/GaN field-effect transistors. Paper presented at 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Korea, Republic of. https://doi.org/10.1109/ICIMW.2009.5324627