This paper reports on the optimization of ITO films deposited by RF magnetron sputtering method from In2O3/SnO2 target. In view of the application of this transparent conductive oxide as top layer in amorphous and a-Si/c-Si heterojunction solar cells, low temperature and low sputtering power have been selected in order to avoid damages of underlying device. Transition of ITO from amorphous to mixed amorphous/crystalline phase has been observed at room temperature with increasing deposition power. Low resistivity amorphous oxide layers (2.8·10-4 Ω·cm) have been achieved at low RF power density. Optical transmittance of this film stays above 82% in the visible range. a-Si:H p-i-n and a-Si/c-Si heterojunction solar cells with 9.4% and 14.5% efficiency respectively have been realized with this ITO as top electrode, after device thermal annealing at 150 °C.
|Publication status||Published - 1997|
|Event||Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - , Unknown|
Duration: 1 Jan 1997 → …
|Conference||Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference|
|Period||1/1/97 → …|
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Condensed Matter Physics
Terzini, E., Nobile, G., Polichetti, T., & Thilakan, P. (1997). Development and application of low temperature RF magnetron sputtered ITO thin films for a-Si:H based p/i/n junction solar cells. Paper presented at Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference, Unknown.