Development and application of low temperature RF magnetron sputtered ITO thin films for a-Si:H based p/i/n junction solar cells

E. Terzini, G. Nobile, T. Polichetti, P. Thilakan

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8 Citations (Scopus)

Abstract

This paper reports on the optimization of ITO films deposited by RF magnetron sputtering method from In2O3/SnO2 target. In view of the application of this transparent conductive oxide as top layer in amorphous and a-Si/c-Si heterojunction solar cells, low temperature and low sputtering power have been selected in order to avoid damages of underlying device. Transition of ITO from amorphous to mixed amorphous/crystalline phase has been observed at room temperature with increasing deposition power. Low resistivity amorphous oxide layers (2.8·10-4 Ω·cm) have been achieved at low RF power density. Optical transmittance of this film stays above 82% in the visible range. a-Si:H p-i-n and a-Si/c-Si heterojunction solar cells with 9.4% and 14.5% efficiency respectively have been realized with this ITO as top electrode, after device thermal annealing at 150 °C.
Original languageEnglish
Publication statusPublished - 1997
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - , Unknown
Duration: 1 Jan 1997 → …

Conference

ConferenceProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
CountryUnknown
Period1/1/97 → …

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All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Terzini, E., Nobile, G., Polichetti, T., & Thilakan, P. (1997). Development and application of low temperature RF magnetron sputtered ITO thin films for a-Si:H based p/i/n junction solar cells. Paper presented at Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference, Unknown.