Crystallization of hydrogenated amorphous germanium (a-Ge:H) thin films deposited by plasma enhanced chemical vapor deposition using the GeH4and H2precursors has been investigated. A comparative analysis of the kinetics of the thermal crystallization by annealing to 650 °C and of the gold-mediated crystallization (Au-MMC) is carried out. The impact of the Au-MMC on the microcrystalline Ge film microstructure and electrical properties is discussed. The Au thin layer results in a more dense and ordered structure with lower roughness of the microcrystalline Ge films. In order to describe the Ge crystallization kinetics, the dielectric functions of a-Ge:H and microcrystalline germanium μc-Ge have also been determined by spectroscopic ellipsometry in the range of 0.75-6.0 eV and parametrized using the Tauc-Lorentz dispersion equation. © 2006 American Institute of Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Giangregorio, M. M., Losurdo, M., Ambrico, M., Capezzuto, P., Bruno, G., & Tapfer, L. (2006). Dielectric function and electric properties of germanium thin films prepared by gold mediated crystallization. Journal of Applied Physics, 99(6), -. . https://doi.org/10.1063/1.2180407