Dielectric function and electric properties of germanium thin films prepared by gold mediated crystallization

Maria M. Giangregorio, Maria Losurdo, Marianna Ambrico, Pio Capezzuto, Giovanni Bruno, Leander Tapfer

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Abstract

Crystallization of hydrogenated amorphous germanium (a-Ge:H) thin films deposited by plasma enhanced chemical vapor deposition using the GeH4and H2precursors has been investigated. A comparative analysis of the kinetics of the thermal crystallization by annealing to 650 °C and of the gold-mediated crystallization (Au-MMC) is carried out. The impact of the Au-MMC on the microcrystalline Ge film microstructure and electrical properties is discussed. The Au thin layer results in a more dense and ordered structure with lower roughness of the microcrystalline Ge films. In order to describe the Ge crystallization kinetics, the dielectric functions of a-Ge:H and microcrystalline germanium μc-Ge have also been determined by spectroscopic ellipsometry in the range of 0.75-6.0 eV and parametrized using the Tauc-Lorentz dispersion equation. © 2006 American Institute of Physics.
Original languageEnglish
Article number063511
Pages (from-to)-
JournalJournal of Applied Physics
Volume99
Issue number6
DOIs
Publication statusPublished - 2006
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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