Distribution of electrically active defects in chemical vapor deposition diamond: Model and measurement

A. Balducci, Marco Marinelli, E. Milani, M.E. Morgada, G. Pucella, G. Rodriguez, A. Tucciarone, G. Verona-Rinati, M. Angelone, M. Pillon

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Abstract

Defects limiting the movement of charge carriers in polycrystalline chemical vapor deposition (CVD) diamond films are located within the grains or in grain boundaries. Their geometrical distribution in the sample is different and is usually unknown. We present here a method to quantitatively evaluate the concentration and distribution of in-grain and grain-boundary located active carrier traps. Since the impact of these two kinds of defects on the performance of CVD diamond based devices is different, it is possible to obtain the defect distribution by measuring the response of diamond alpha particle detectors as a function of film thickness. The Hecht theory, describing the efficiency of a semiconductor particle detector, has been modified to take into account the polycrystalline nature of CVD diamond. This extended Hecht model was then used to fit experimental data and extract quantitative information about the defect distribution. © 2005 American Institute of Physics.
Original languageEnglish
Article number022108
Pages (from-to)-
JournalApplied Physics Letters
Volume86
Issue number2
DOIs
Publication statusPublished - 10 Jan 2005
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Balducci, A., Marinelli, M., Milani, E., Morgada, M. E., Pucella, G., Rodriguez, G., ... Pillon, M. (2005). Distribution of electrically active defects in chemical vapor deposition diamond: Model and measurement. Applied Physics Letters, 86(2), -. [022108]. https://doi.org/10.1063/1.1842856