In this work we propose to replace the emitter layer of the n-type doped a-Si:H/p-type doped crystalline silicon heterojunction solar cell, with an n-type doped SiOxamorphous oxide layer. The n-type doped SiOx:H shows a lower activation energy and higher carrier mobility value with respect to the n-type doped a-Si:H. Moreover, higher transmission, below 500 nm of wavelength, and higher conductivity are measured. The relevance of transparency of the (n) a-SiOx:H has been studied using that film in solar cells. The electrical parameters revealed a solar cell efficiency of 15.8 %. Moreover, the effect of TCO as a front side cell electrode is considered and discussed on the base of its workfunction when applied on top of the n-type doped SiOxemitter layer using also numerical simulations. © 2013 Springer-Verlag Berlin Heidelberg.
|Pages (from-to)||705 - 712|
|Number of pages||8|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2014|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
Izzi, M., Tucci, M., Serenelli, L., Mangiapane, P., Della Noce, M., Usatii, I., ... Delli Veneri, P. (2014). Doped SiO. Applied Physics A: Materials Science and Processing, 115(2), 705 - 712. https://doi.org/10.1007/s00339-013-7858-1