In this work we showed a comparison of the effect of H2, CF4/O2, RF dry etching on the properties of the heterostructure device useful for photovoltaic application. To this aim we performed low temperature (50-300 K) capacitance measurements in a wide range of probe signal frequencies (10 Hz-10 kHz). Differences in the capacitance profile between samples with various plasma dry treatments indicated different defect density profile at interface. With the aid of a finite difference model of the capacitance as a function of temperature and frequency we extracted information about the defect distribution at interface, that greatly influence the photovoltaic properties of the devices. As a result, the density and the nature of defects at interface has been correlated to the technological parameters: wafer cleaning procedure, hydrogen plasma treatment, type and concentration of dopants at interface. © 2002 Elsevier Science B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Tucci, M., Salurso, E., Roca, F., & Palma, F. (2002). Dry cleaning process of crystalline silicon surface in a-Si:H/c-Si heterojunction for photovoltaic applications. Thin Solid Films, 403-404, 307 - 311. https://doi.org/10.1016/S0040-6090(01)01645-5