Dry cleaning process of crystalline silicon surface in a-Si:H/c-Si heterojunction for photovoltaic applications

M. Tucci, E. Salurso, F. Roca, F. Palma

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21 Citations (Scopus)

Abstract

In this work we showed a comparison of the effect of H2, CF4/O2, RF dry etching on the properties of the heterostructure device useful for photovoltaic application. To this aim we performed low temperature (50-300 K) capacitance measurements in a wide range of probe signal frequencies (10 Hz-10 kHz). Differences in the capacitance profile between samples with various plasma dry treatments indicated different defect density profile at interface. With the aid of a finite difference model of the capacitance as a function of temperature and frequency we extracted information about the defect distribution at interface, that greatly influence the photovoltaic properties of the devices. As a result, the density and the nature of defects at interface has been correlated to the technological parameters: wafer cleaning procedure, hydrogen plasma treatment, type and concentration of dopants at interface. © 2002 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)307 - 311
Number of pages5
JournalThin Solid Films
Volume403-404
DOIs
Publication statusPublished - 1 Feb 2002

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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