Effect of ZnO sputtering deposition parameters on the performances of back reflector enhanced amorphous silicon solar cells

E. Terzini, A. Rubino, R. De Rosa, M.L. Addonizio

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Abstract

Low resistivity (5×10-4 Ω cm) and high transmittance (T > 82%) ZnO films have been obtained by RF magnetron sputtering deposition of ZnO/Al2O3 (2.5% wt.) target. The doped oxide films have been investigated by optical and electrical measurements and by scanning electron microscopy. The optimized recipes have been applied to the realisation of amorphous p-i-n solar cells back reflector in the structure: TCO/pin/ZnO/Ag. The application of ZnO/Ag leads to an increase of the Jsc current of about 13% but a poorer fill factor steadily affects the characteristics of the devices. We demonstrate that a thicker n+ layer of about three times the standard one is effective in driving the FF toward the normal values. The cells' behaviour has been ascribed to a thinning of the n+ layer resulting from a sputtering action of energetic oxygen atoms during the ZnO deposition process. This effect has been evidenced by measuring the absorbance of SnO2/a-Si (20 nm)/ZnO in comparison with SnO2/a-Si (20 nm) structure.
Original languageEnglish
Publication statusPublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - , Unknown
Duration: 1 Jan 1995 → …

Conference

ConferenceProceedings of the 1995 MRS Spring Meeting
CountryUnknown
Period1/1/95 → …

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Terzini, E., Rubino, A., De Rosa, R., & Addonizio, M. L. (1995). Effect of ZnO sputtering deposition parameters on the performances of back reflector enhanced amorphous silicon solar cells. Paper presented at Proceedings of the 1995 MRS Spring Meeting, Unknown.