Effects of charge impurities and laser energy on Raman spectra of graphene

Martin Hulman, Miroslav Haluška, Giusy Scalia, Dirk Obergfell, Siegmar Roth

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Abstract

The position and width of the Raman G-line was analyzed for unintentionally doped single-layered graphene samples. Results indicate a significant heating of the monolayer by the laser beam. Moreover, a weak additional component was resolved in the G-band. The position of the line is independent of the level of doping of the sample. We conclude that this new component is due to the phonons coupled to the intraband electronic transitions. © 2008 American Chemical Society.
Original languageEnglish
Pages (from-to)3594 - 3597
Number of pages4
JournalNano Letters
Volume8
Issue number11
DOIs
Publication statusPublished - Nov 2008
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Hulman, M., Haluška, M., Scalia, G., Obergfell, D., & Roth, S. (2008). Effects of charge impurities and laser energy on Raman spectra of graphene. Nano Letters, 8(11), 3594 - 3597. https://doi.org/10.1021/nl8014439