The photoluminescence response of a series of porous silicon samples, obtained by electrochemical etching of n-type CZ-silicon, has been recorded in various gas environments. A quenching is reported when porous silicon is in the presence of an oxidising ambient (dry air or acetone vapours in dry air). Process reversibility depends on the duration of laser illumination. Quenching is also recorded if porous silicon is in the presence of acetone vapours in nitrogen ambient, where complete reversibility is however shown. Moreover, the peak wavelength is red shifted in dry air and blue shifted in acetone vapours. Irreversible quenching is related to the growth of a thin oxide layer on the emitting nanostructures.
|Publication status||Published - 1999|
|Event||Proceedings of the 1999 MRS Spring Meeting - Symposium E on Luminescent Materials - , Unknown|
Duration: 1 Jan 1999 → …
|Conference||Proceedings of the 1999 MRS Spring Meeting - Symposium E on Luminescent Materials|
|Period||1/1/99 → …|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Di Francia, G., Ferrara, V. L. A., Lancellotti, L., Quercia, L., & Fasolino, T. (1999). Effects of gas environments on porous silicon photoluminescence. Paper presented at Proceedings of the 1999 MRS Spring Meeting - Symposium E on Luminescent Materials, Unknown.