Effects of the polymeric dielectric on OTFT performances

Mario Petrosino, Alfredo Rubino, Riccardo Miscioscia, Anna Girolamo Del De Mauro, Carla Minarini

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Three polymers have been tested as gate dielectric in pentacene-OTFTs: Polyimide, Polystyrene and commercial Photoresist. The electrical characterizations revealed a gate leakage current and the effects of source and drain contact barriers both responsible of the non-crossing of the curves Into the Is-VDs diagram origin. An electrical model have been proposed taking into account the gate leakage current and the VDS shift by inserting two gate-diodes and a voltage source. The model has allowed to estimate the correct values of the channel mobility and the device voltage threshold. © 2009 IEEE.
Original languageEnglish
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event3rd International Conference on Signals, Circuits and Systems, SCS 2009 - , Tunisia
Duration: 1 Jan 2009 → …

Conference

Conference3rd International Conference on Signals, Circuits and Systems, SCS 2009
CountryTunisia
Period1/1/09 → …

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All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Petrosino, M., Rubino, A., Miscioscia, R., De Mauro, A. G. D., & Minarini, C. (2009). Effects of the polymeric dielectric on OTFT performances. Paper presented at 3rd International Conference on Signals, Circuits and Systems, SCS 2009, Tunisia. https://doi.org/10.1109/ICSCS.2009.5412549