Copper oxide thin films were prepared by reactive of magnetron sputtering of a pure copper target in an oxygen-argon atmosphere. The phases of the deposited films strongly depend on the oxygen content in the sputtering gas. X-ray diffraction studies show that by controlling the oxygen partial pressure single phase Cu2U and CuO can be obtained. The resistivity of the Cu2O film in the present study is 43 Ω cm. The optical constants were evaluated from transmission and reflection measurements.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Parretta, A., Jayaraj, M. K., Di Nocera, A., Loreti, S., Quercia, L., & Agati, A. (1996). Electrical and optical properties of copper oxide films prepared by reactive RF magnetron sputtering. Physica Status Solidi (A) Applied Research, 155(2), 399 - 404. https://doi.org/10.1002/pssa.2211550213