In this letter, the effect of deposition temperature on the barrier height between indium tin oxide (ITO) and crystalline silicon (c-Si) is presented. ITO films have been deposited by RF magnetron sputtering in the range between room temperature and 200 °C on both p-and n-type doped c-Si substrates. From current-voltage and capacitance-voltage characteristics of the ITO/c-Si junctions, we found that ITO deposited on 1-Ωcdotcm n-type doped silicon forms a rectifying junction with barrier heights varying from 0.9 to 0.3 eV, while at room temperature, an ohmic behavior on 1-Ωcm p-type c-Si is obtained. © 2012 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
De Cesare, G., Caputo, D., & Tucci, M. (2012). Electrical properties of ITO/crystalline-silicon contact at different deposition temperatures. IEEE Electron Device Letters, 33(3), 327 - 329. . https://doi.org/10.1109/LED.2011.2180356