Electrical properties of ITO/crystalline-silicon contact at different deposition temperatures

Giampiero De Cesare, Domenico Caputo, Mario Tucci

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

In this letter, the effect of deposition temperature on the barrier height between indium tin oxide (ITO) and crystalline silicon (c-Si) is presented. ITO films have been deposited by RF magnetron sputtering in the range between room temperature and 200 °C on both p-and n-type doped c-Si substrates. From current-voltage and capacitance-voltage characteristics of the ITO/c-Si junctions, we found that ITO deposited on 1-Ωcdotcm n-type doped silicon forms a rectifying junction with barrier heights varying from 0.9 to 0.3 eV, while at room temperature, an ohmic behavior on 1-Ωcm p-type c-Si is obtained. © 2012 IEEE.
Original languageEnglish
Article number6142006
Pages (from-to)327 - 329
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number3
DOIs
Publication statusPublished - Mar 2012
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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