Electrical stress degradation of small-grain polysilicon thin-film transistors

Domenico Palumbo, Silvia Masala, Paolo Tassini, Alfredo Rubino, Dario della Sala

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension. With the aid of numerical simulations, we investigate the effects of static stress using two types of procedures: the on stress and the hot carrier stress. Results show that the variations of trap state density into the whole polysilicon layer and not only near the drain junction are responsible for the degradation of TFTs performances in both the two types of stress and that the interface trap states play a negligible role compared to the bulk trap states. © 2007 IEEE.
Original languageEnglish
Pages (from-to)476 - 482
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume54
Issue number3
DOIs
Publication statusPublished - Mar 2007
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this