Electronic memory effect in a crystalline silicon/polyether heterostructure

H.-C. Neitzert, S. Concilio, P. Iannelli, P. Vacca

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Abstract

Organic/inorganic heterojunctions have been fabricated by spin-coating of an oxadiazole based polyether on top of either n-type or p-type crystalline silicon substrates . The prepared heterodiodes showed good rectification. During currentvoltage measurements sharp current switching effects have been observed in the reverse bias characteristics for both types of heterodiodes. In particular a very stable hysteresis in the reverse characteristics of the polyether / n-type crystalline silicon has been measured at applied voltages below 1V. The application of this heterodiode as electrical memory with an on/off-ratio of about 2 orders of magnitude has been demonstrated. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
Original languageEnglish
Pages (from-to)988 - 991
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume7
Issue number3-4
DOIs
Publication statusPublished - 2010
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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