Organic/inorganic heterojunctions have been fabricated by spin-coating of an oxadiazole based polyether on top of either n-type or p-type crystalline silicon substrates . The prepared heterodiodes showed good rectification. During currentvoltage measurements sharp current switching effects have been observed in the reverse bias characteristics for both types of heterodiodes. In particular a very stable hysteresis in the reverse characteristics of the polyether / n-type crystalline silicon has been measured at applied voltages below 1V. The application of this heterodiode as electrical memory with an on/off-ratio of about 2 orders of magnitude has been demonstrated. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
|Pages (from-to)||988 - 991|
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2010|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
Neitzert, H-C., Concilio, S., Iannelli, P., & Vacca, P. (2010). Electronic memory effect in a crystalline silicon/polyether heterostructure. Physica Status Solidi (C) Current Topics in Solid State Physics, 7(3-4), 988 - 991. https://doi.org/10.1002/pssc.200982812