Electronic structure of the high-temperature Ge(1 0 0) surface studied by valence band photoemission

A. Santoni, V.R. Dhanak

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Abstract

The electronic structure of the Ge(100) surface has been investigated by means of synchrotron radiation valence band photoemission in a temperature range spanning from room temperature to 1190 K close to the bulk melting temperature. The surface is observed to become increasingly metallic up to the (2 × 1) to (1 × 1) phase transition temperature which takes place at about 960 K. Above this temperature the electronic structure of the surface does not change appreciably, indicating the persistence of a dimerized and disordered surface up to temperatures close to the melting point. © 2003 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)-
JournalSurface Science
Volume537
Issue number1-3
DOIs
Publication statusPublished - 1 Jul 2003
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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