The electronic structure of the Ge(100) surface has been investigated by means of synchrotron radiation valence band photoemission in a temperature range spanning from room temperature to 1190 K close to the bulk melting temperature. The surface is observed to become increasingly metallic up to the (2 × 1) to (1 × 1) phase transition temperature which takes place at about 960 K. Above this temperature the electronic structure of the surface does not change appreciably, indicating the persistence of a dimerized and disordered surface up to temperatures close to the melting point. © 2003 Elsevier Science B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Santoni, A., & Dhanak, V. R. (2003). Electronic structure of the high-temperature Ge(1 0 0) surface studied by valence band photoemission. Surface Science, 537(1-3), -. https://doi.org/10.1016/S0039-6028(03)00693-9