Ellipsometric and XPS analysis of the interface between silver and SiO

E. Masetti, J. Bulir, S. Gagliardi, V. Janicki, A. Krasilnikova, G. Di Santo, C. Coluzza

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Abstract

The chemical reactions and diffusion processes at the interface of a metal with oxides and nitrides are a critical issue in the production of metal-dielectric optical filters. The optical properties of these filters depend on the quality of the interfaces between the metal layer and the adjacent dielectric layers. The chemical and physical processes occurring at the silver-dielectric interface are studied by means of ellipsometry and XPS analysis and comprise the subject of the present work. © 2003 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)468 - 472
Number of pages5
JournalThin Solid Films
Volume455-456
DOIs
Publication statusPublished - 1 May 2004
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Masetti, E., Bulir, J., Gagliardi, S., Janicki, V., Krasilnikova, A., Di Santo, G., & Coluzza, C. (2004). Ellipsometric and XPS analysis of the interface between silver and SiO. Thin Solid Films, 455-456, 468 - 472. https://doi.org/10.1016/j.tsf.2003.11.244