Luminescence properties of silicon-related centers in CVD-grown diamond films and their spatial distribution along the growth direction have been investigated. It is found that the lineshape and peak position of the emission band depend both on excitation energy and light focalization depth, suggesting the coexistence of two optical centers related to isolated vacancies and to silicon-vacancy complexes. A simple model of the electronic structure of this defect is proposed. © 1997 Elsevier Science S.A.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Physics and Astronomy(all)
- Materials Chemistry
- Electrical and Electronic Engineering
Rossi, M. C., Salvatori, S., Galluzzi, F., Montereali, R. M., & Somma, F. (1997). Emission and excitation spectra of silicon-related luminescent centers in CVD-grown diamond films. Diamond and Related Materials, 6(10), 1564 - 1567. https://doi.org/10.1016/S0925-9635(97)00058-7