Epitaxial growth of CeO

L. Ciontea, T. Ristoiu, R.B. Mos, M. Nasui, T. Patrisor Jr., M.S. Gabor, A. Mancini, A. Rufoloni, G. Celentano, T. Petrisor

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The CeO2films were epitaxially grown on (0 0 1)[1 0 0]Ni-W biaxially textured substrate using a propionate-based metalorganic deposition (MOD) method. The as deposited CeO2films exhibit a sharp biaxial texture, with a full width at half maximum (FWHM) of φ and ω-scans of about 7.15°and 7.8°, respectively. The in-plane and out-of plane epitaxial relationship are [0 0 1]CeO2//[0 0 1]Ni-W and [1 0 0]CeO2//[1 1 0]Ni-W, respectively. The morphology of the films is strongly correlated with the film thickness and crystallization temperature. Thus, the 0.3 μm thick film crystallized at 1100°C has a smooth surface free of cracks or voids with a root mean square roughness (RMS) of about 2.5 nm, whilst the 1.1 μm thick film presents many cracks and a low density of voids. The cracks along the substrate grain boundaries observed in the thicker films take place in the already crystallized film during the rapid cooling process due to difference between the thermal expansion coefficients of the film and metallic Ni-W substrate. © 2012 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)772 - 778
Number of pages7
JournalMaterials Chemistry and Physics
Issue number2-3
Publication statusPublished - 16 Apr 2012
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Ciontea, L., Ristoiu, T., Mos, R. B., Nasui, M., Patrisor Jr., T., Gabor, M. S., Mancini, A., Rufoloni, A., Celentano, G., & Petrisor, T. (2012). Epitaxial growth of CeO. Materials Chemistry and Physics, 133(2-3), 772 - 778. https://doi.org/10.1016/j.matchemphys.2012.01.092