Epitaxial growth of YBa

V. Boffaf, T. Petrisor, G. Celentano, F. Fabbri, C. Annino, S. Ceresara, L. Ciontea, V. Galluzzi, U. Gambardella, G. Grimaldi, A. Mancini

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Abstract

The superconducting YBa2Cu3O7-δCeO2/NiO multilayer structure was grown in situ by pulsed-laser deposition on biaxially textured Ni89V11 non-magnetic alloy. The role of vanadium is to decrease the Curie temperature of Ni and to favour the formation of oriented NiO. The (00l)NiO buffer layer has been formed by the controlled oxidation of the Ni-V substrate under 10 mTorr oxygen pressure and at 700 °C. The critical current density of 0.6 MA cm-2, at 77 K and zero magnetic field, was obtained for 0.7 μm thick YBa2Cu3O7-δ films.
Original languageEnglish
Pages (from-to)1467 - 1469
Number of pages3
JournalSuperconductor Science and Technology
Volume13
Issue number10
DOIs
Publication statusPublished - Oct 2000
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Boffaf, V., Petrisor, T., Celentano, G., Fabbri, F., Annino, C., Ceresara, S., ... Mancini, A. (2000). Epitaxial growth of YBa. Superconductor Science and Technology, 13(10), 1467 - 1469. https://doi.org/10.1088/0953-2048/13/10/311